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| SI9953DY Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) -20 rDS(on) (W) 0.25 @ VGS = -10 V 0.40 @ VGS = -4.5 V ID (A) "2.3 "1.5 S1 S2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View D1 D1 D2 D2 8 7 6 5 D1 D1 D2 D2 G1 G2 P-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit -20 "20 "2.3 "1.8 "10 -1.7 2.0 Unit V A W 1.3 -55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70138 S-00652--Rev. K, 27-Mar-00 www.vishay.com S FaxBack 408-970-5600 Symbol RthJA Limit 62.5 Unit _C/W 1 SI9953DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current VGS(th) IGSS IDSS VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "20 V VDS = -16 V, VGS = 0 V VDS = -16 V, VGS = 0 V, TJ = 55_C VDS v -5 V, VGS = -10 V VDS v -5 V, VGS = -4.5 V VGS = -10 V, ID = 1 A VGS = -4.5 V, ID = 0.5 A VDS = -15 V, ID = -2.3 A IS = -1.7 A, VGS = 0 V -10 A -1.5 0.12 0.22 2.5 -0.8 -1.2 0.25 0.40 W S V -1.0 "100 -2 -25 V nA mA Symbol Test Condition Min Typa Max Unit On-State Drain Currentb ID(on) Drain-Source On-State Resistanceb Forward Transconductanceb Diode Forward Voltageb rDS(on) gfs VSD Dynamica Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 1.7 A, di/dt = 100 A/ms VDD = -10 V, RL = 10 W 10 V, ID ^ -1 A, VGEN = -10 V RG = 6 W 1A 10 V, VDS = -10 V, VGS = -10 V ID = -2.3 A 10 V 10 V, 23 6.7 1.3 1.6 10 12 20 10 70 40 40 90 50 100 ns 25 nC C Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. www.vishay.com S FaxBack 408-970-5600 2 Document Number: 70138 S-00652--Rev. K, 27-Mar-00 SI9953DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 15 VGS = 10 - 7 V 12 I D - Drain Current (A) 6V I D - Drain Current (A) 8 25_C 9 5V 6 6 125_C 10 TC = -55_C Transfer Characteristics 4 3 4V 3V 2 0 0 2 4 6 8 10 0 0 1 2 3 4 5 6 7 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 1.0 VGS = 4.5 V r DS(on) - On-Resistance ( ) 0.8 C - Capacitance (pF) 500 400 Coss 300 700 600 Capacitance 0.6 0.4 Ciss 200 100 Crss 0.2 VGS = 10 V 0 0 2 4 ID - Drain Current (A) 6 8 0 0 5 10 15 20 VDS - Drain-to-Source Voltage (V) 10 Gate Charge 2.0 On-Resistance vs. Junction Temperature V GS - Gate-to-Source Voltage (V) 6 r DS(on) - On-Resistance ( ) (Normalized) 8 VDS =10 V ID = 2.3 A 1.6 VGS = 10 V ID = 1.0 A 1.2 4 0.8 2 0.4 0 0 2 4 6 8 0 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 70138 S-00652--Rev. K, 27-Mar-00 www.vishay.com S FaxBack 408-970-5600 3 SI9953DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 20 1.0 On-Resistance vs. Gate-to-Source Voltage 10 I S - Source Current (A) TJ = 150_C r DS(on) - On-Resistance ( ) 0.8 ID = 2.3 A 0.6 TJ = 25_C 0.4 0.2 1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.8 30 Single Pulse Power 0.6 ID = 250 A 25 V GS(th) Variance (V) 0.4 20 0.2 15 0.0 10 -0.2 5 0 -25 0 25 50 75 100 125 150 0.010 0.100 1 10 30 -0.4 -50 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 0.02 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 62.5_C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 10-3 10-2 10-1 1 4. Surface Mounted 10 30 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 4 Document Number: 70138 S-00652--Rev. K, 27-Mar-00 |
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